Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1
Cambridge / RSC Publ. (2019) [Journal Article]
Nanoscale
Volume: 11
Issue: 36
Page(s): 16978-16990
Authors
Selected Authors
Rosário, Carlos M. M.
Thöner, Bo
Schönhals, Alexander
Menzel, Stephan
Meledin, Alexander
Other Authors
Barradas, Nuno P.
Alves, Eduardo
Mayer, Joachim
Wuttig, Matthias
Waser, Rainer
Sobolev, Nikolai A.
Wouters, Dirk J.
Identifier
- DOI: 10.1039/C9NR05285B
- REPORT NUMBER: RWTH-2020-04653