The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

Oosthoek, J. L. M.; Krebs, D.; Salinga, Martin; Gravesteijn, D. J.; Hurkx, G. A. M.; Kooi, B. J.

Melville, NY : AIP [u.a.] (2012)

In: Journal of applied physics
Band: 112
Heft: 8
Seite(n)/Artikel-Nr.: 084506