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TitleAuthor(s)Year
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Investigation of the interface abruptness of MOVPE-grown InGaAs/InP multi quantum wells by Raman spectroscopy
Published in: Proc. 4. ICFSI. o.O. 1994Finders, J.
Keuter, M.
Geurts, J.
Woitok, J.
Kohl, A.
et al.1994 -
In situ Raman monitoring of III-V compound layer formation by interdiffusion of group III overlayers and group V substrates
Published in: Proc. 4. ICFSI. o.O. 1994Wagner, V.
Drews, D.
Esser, N.
Zahn, D. R. T.
Geurts, J.
et al.1994 -
Systems on chips : the microelectronics challenge of the next 20 years
Published in: Festkörperprobleme = Advances in solid state physics
[DOI: 10.1007/BFb0107887]Wieder, Armin W.1993 -
The influence of microelectronic processing steps on the properties of porous Si-layers
Published in: Optical properties of low dimensional silicon structures. Hrsg. D.C. Bensahel [u.a.]Münder, H.
Berger, M. G.
Frohnhoff, S.
Thönissen, M.
Lüth, H.
et al.1993 -
Trautwein, A.
Kreibig, U.
Oberhausen, E.1993 -
Characterization of porous silicon layers by reflectance spectroscopy
Published in: Proc. Mat. Res. Soc. Sympos. 238 (1993)Theiss, W.
Grosse, P.
Münder, H.
Lüth, H.
Herino, R.
et al.1993 -
Porous silicon
Published in: Proceedings / 9th International Conference on Fourier Transform Spectroscopy : 23 - 27 August 1993, Calgary, Alberta, Canada / John E. Bertie ... chairs/ed.Theiss, W.
Arntzen, M.
Facsko, S.
Feuerbacher, M.
Wernke, M.
et al.1993 -
FTIR-microspectroscopy of organic monolayers in transmission
Published in: Proceedings / SPIE, International Society for Optical Engineering : P. - 2089Mizaikoff, B.
Kellner, R.
Taga, K.
Theiss, W.
Grosse, P.1993 -
Elastic light scattering by spherical particles in the near field approximation
Published in: Eur. Optical Soc.: Annu. Meet. Dig. Ser. 3 (1993)Quinten, M.1993 -
Comparison between gallium-implanted layers of ZnSe and ZnSSe by optical, electrical and electron beam characterization methods
Published in: Proc. 2.-6. Int. Conf. 1993Gleitsmann, G.
Ammann, Norbert
Hermans, J.
Schneider, A.
Geurts, J.
et al.1993 -
Optical and X-ray analysis of ZnSSe/ZnSe superlattices on GaAs, grown by metalorganic vapour phase epitaxy
Published in: Proc. 2.-6. Int. Conf. 1993Hermans, J.
Woitok, J.
Schiffers, W.
Geurts, J.
Schneider, A.
et al.1993 -
Chemical composition of porous silicon layers studied by IR spectroscopy
Published in: Applied surface science
[DOI: 10.1016/0169-4332(93)90098-V]Theiss, W.
Grosse, P.
Münder, H.
Lüth, H.
Herino, R.
et al.1993 -
FTIR-microspectroscopic detection of ultra-thin organic films on chalcogenide fibers
Published in: Fresenius journal of analytical chemistryKellner, R.
Mizaikoff, B.
Taga, K.
Theiss, W.
Grosse, P.1993 -
Far infrared optical properties of metal-insulator composites
Published in: Zeitschrift für Physik / D, Atoms, molecules and clustersSturm, J.
Grosse, P.
Morley, S.
Theiss, W.1993 -
Infrared reflection studies of ceramics: Characterization of SiC layers on graphite substrates
Published in: Fresenius journal of analytical chemistryHopfe, V.
Grählert, W.
Brennfleck, K.
Korte, E. H.
Theiss, W.1993 -
Characterisation of porous silicon layers by spectroscopic ellipsometry
Published in: Journal of luminescenceRossow, U.
Münder, H.
Thönissen, M.
Theiss, W.1993 -
A contribution to friction between solids
Published in: Physica status solidi / B, Basic solid state physics
[DOI: 10.1002/pssb.2221760210]Gerlach, E.1993 -
Light induced aggregation of metal cluster
Published in: Zeitschrift für Physik / D, Atoms, molecules and clustersEckstein, H.
Kreibig, U.1993 -
The optical extinction of ligand stabilized Au13 and Au55-clusters: The vanishing of the Mie-resonance
Published in: Zeitschrift für Physik / D, Atoms, molecules and clustersHermann, M.
Kreibig, U.
Schmid, G.1993 -
Binary cluster: Homogeneous alloys and nucleus-shell structures
Published in: Zeitschrift für Physik / D, Atoms, molecules and clustersSinzig, J.
Radtke, U.
Quinten, M.
Kreibig, U.1993 -
Absorption and elastic scattering of light by particle aggregates
Published in: Applied opticsQuinten, M.
Kreibig, U.1993 -
Width of cluster plasmon resonances: Bulk dielectric functions and chemical interface damping
Published in: Physical Review B
[DOI: 10.1103/PhysRevB.48.18178]Hövel, H.
Fritz, S.
Hilger, A.
Kreibig, U.
Vollmer, M.1993 -
Recursion formalism for the scattering coefficients of multicoated spheres. Applications to aerosol particles
Published in: Journal of aerosol scienceQuinten, M.
Sinzig, J.1993 -
Gallium and nitrogen ion implantation in MOVPE-grown ZnSe/GaAs
Published in: Physica / B, Condensed matterGeurts, J.
Hermans, J.
Gleitsmann, G.
Geyzers, K. P.
Schneider, A.
et al.1993 -
Analysis of band bending at III-V semiconductor interfaces by Raman spectroscopy
Published in: Surface scienceGeurts, J.1993 -
Investigation of MOVPE-grown InGaAs/InP multi quantum wells by Raman spectroscopy and X-ray diffractometry
Published in: Materials science & engineering / B, Solid state materials for advanced technologyFinders, J.
Keuter, M.
Gnoth, D.
Geurts, J.
Woitok, J.
et al.1993 -
Control of Schottky barrier height of Ag/Mn/n-GaAs(110) diodes with Mn interlayer thickness
Published in: Semiconductor science and technology
[DOI: 10.1088/0268-1242/7/3/011]Spaltmann, D.
Geurts, J.
Esser, N.
Zahn, D. R. T.
Richter, W.
et al.1992 -
The influence of Cd overpressure in the molecular beam epitaxy of InSb/CdTe heterostructures: A combined Raman and infrared spectroscopy study
Published in: Applied surface scienceZahn, D. R. T.
Richter, W.
Eickhoff, T.
Geurts, J.
Golding, T. D.
et al.1989 -
Radiation-induced band bending on GaAs(110)
Published in: Surface scienceGeurts, J.
Latta, E. E.
Reihl, B.1989 -
Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature
Published in: Applied surface scienceEsser, N.
Hünermann, M.
Resch, U.
Spaltmann, D.
Geurts, J.
et al.1989 -
Epitaxial InSb(111) layers on Sb(111) substrates characterized by Raman spectroscopy
Published in: Journal of physics / Condensed matterRettweiler, U.
Richter, W.
Resch, U.
Geurts, J.
Sporken, R.
et al.1989 -
Plasma excitation in semiconductors containing extended scattering centers
Published in: Physica status solidi / B, Basic solid state physicsGerlach, E.
Kistinger, S.1989 -
Epitaxial InSb(111) layers on Sb(111) substrates characterized by Raman spectroscopy
Published in: Journal of physics / Condensed matterRettweiler, U.
Richter, W.
Resch, U.
Geurts, J.
Sporken, R.
et al.1989 -
Plasma etched and sputtered GaAs(100) surfaces investigated by ellipsometry and Raman spectroscopy
Published in: Journal of physics / Condensed matterRossow, U.
Fieseler, T.
Geurts, J.
Zahn, D. R. T.
Richter, W.
et al.1989 -
Strukturuntersuchungen an hochdispersen und kompakten Kieselgläsern mittels IR-Spektroskopie
Published in: Glass science and technologyClasen, R.
Grosse, P.
Theiss, W.1989 -
Raman spectroscopy of InSb/CdTe heterostructures: Improved interface quality obtained by Cd-overpressure during molecular beam epitaxial growth
Published in: Applied physics lettersZahn, D. R. T.
Golding, T. D.
Mackey, K. J.
Geurts, J.
Dinan, J. H.
et al.1988
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