Control of Schottky barrier height of Ag/Mn/n-GaAs(110) diodes with Mn interlayer thickness
Spaltmann, D.; Geurts, J.; Esser, N.; Zahn, D. R. T.; Richter, W.; Williams, R. H.
Bristol : IOP Publ. (1992)
Journal Article
In: Semiconductor science and technology
Volume: 7
Issue: 3
Page(s)/Article-Nr.: 344-346
Identifier
- DOI: 10.1088/0268-1242/7/3/011
- RWTH PUBLICATIONS: RWTH-CONV-087244