Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature

Esser, N.; Hünermann, M.; Resch, U.; Spaltmann, D.; Geurts, J.; Zahn, D. R. T.; Richter, W.; Williams, R. H.

Amsterdam [u.a.] : Elsevier (1989)
Journal Article

In: Applied surface science
Volume: 41/42
Page(s)/Article-Nr.: 169