Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1

Rosário, Carlos M. M. (Corresponding author); Thöner, Bo; Schönhals, Alexander; Menzel, Stephan; Meledin, Alexander; Barradas, Nuno P.; Alves, Eduardo; Mayer, Joachim; Wuttig, Matthias; Waser, Rainer; Sobolev, Nikolai A.; Wouters, Dirk J.

Cambridge : RSC Publ. (2019)
Journal Article

In: Nanoscale
Volume: 11
Issue: 36
Page(s)/Article-Nr.: 16978-16990


  • Central Facility for Electron Microscopy [025000]
  • Chair of Microstructure Analysis [025010]
  • JARA - FIT [080009]
  • Department of Physics [130000]
  • Chair of Experimental Physics I A and I. Institute of Physics [131110]
  • Chair of Materials of Electrical Engineering II and Institute of Materials of Electrical Engineering [611610]